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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3640
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3640 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
ORDERING INFORMATION
PART NUMBER 2SK3640-ZK PACKAGE TO-252 (MP-3ZK)
FEATURES
* Low on-state resistance RDS(on)1 = 21 m MAX. (VGS = 10 V, ID = 9 A) RDS(on)2 = 40 m MAX. (VGS = 4.5 V, ID = 9 A) * Low Ciss: Ciss = 570 pF TYP. * Built-in gate protection diode
(TO-252)
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
30 16 19 76 20 1.0 150 -55 to +150 10 10
V V A A W W C C A mJ
Total Power Dissipation (TC = 25C) Total Power Dissipation Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2
IAS EAS
Notes 1. PW 10 s, Duty Cycle 1% 2. Starting Tch = 25C, VDD = 15 V, RG = 25 , L = 100 H, VGS = 20 0 V
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D15968EJ3V0DS00 (3rd edition) Date Published January 2005 NS CP(K) Printed in Japan
The mark
shows major revised points.
2002
2SK3640
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance
Note Note
SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2
TEST CONDITIONS VDS = 30 V, VGS = 0 V VGS = 16 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 9 A VGS = 10 V, ID = 9 A VGS = 4.5 V, ID = 9 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 15 V, ID = 9 A VGS = 10 V RG = 10
MIN.
TYP.
MAX. 10 10
UNIT
A A
V S
1.5 3.7 7.4 15 24 570 160 100 7.7 4.7 24 7
2.5
Drain to Source On-state Resistance
21 40
m m pF pF pF ns ns ns ns nC nC nC V ns nC
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Note
Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr
VDD = 24 V VGS = 10 V ID = 19 A IF = 19 A, VGS = 0 V IF = 19 A, VGS = 0 V di/dt = 100 A/s
14 2.4 4.3 0.95 21 12
Note Pulsed: PW 350 s, Duty Cycle 2%
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V 50
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L VDD PG. RG
RL VDD
VGS VGS
Wave Form
0
10%
VGS
90%
VDS
90% 90% 10% 10%
BVDSS IAS ID VDD VDS
VGS 0 = 1 s Duty Cycle 1%
VDS VDS
Wave Form
0
td(on) ton
tr
td(off) toff
tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA PG. 50
RL VDD
2
Data Sheet D15968EJ3V0DS
2SK3640
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - %
120 100 80 60 40 20 0 0 25 50 75 100 125 150 175
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
25
PT - Total Power Dissipation - W
20
15
10
5
0 0 25 50 75 100 125 150 175
TC - Case Temperature - C
TC - Case Temperature - C
FORWARD BIAS SAFE OPERATING AREA
1000 PW = 10 s
ID - Drain Current - A
100 ID(DC) 10
ID(pulse) 100 s
RDS(on) Limited (at VGS = 10 V) 1
DC
1 ms 10 ms
Power Dissipation Limited TC = 25C Single pulse
0.1 0.1 1 10 100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(t) - Transient Thermal Resistance - C/W
R th(ch-A ) = 125C /W 100
10 R th(ch-C ) = 6.25C /W 1
0.1 Single pulse 0.01 10
100 1m 10 m 100 m 1 10 100 1000
PW - Pulse Width - s
Data Sheet D15968EJ3V0DS
3
2SK3640
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
100
FORWARD TRANSFER CHARACTERISTICS
100
ID - Drain Current - A
ID - Drain Current - A
80
VGS = 10 V
10
60 4.5 V
1
Tch = -55C 25C 75C 150C
40
20 Pulsed 0 0 1 2 3
0.1 VDS = 10 V Pulsed 0.01 0 1 2 3 4 5
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE
3
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S
100 Tch = -55C 25C 75C 150C
VGS(off) - Gate Cut-off Voltage - V
2.5 2 1.5 1 0.5 0 -50 0 50
VDS = 10 V ID = 1 mA
10
1
VDS = 10 V Pulsed 0.1 0.1 1 10 100
100
150
Tch - Channel Temperature - C
ID - Drain Current - A
RDS(on) - Drain to Source On-state Resistance - m
50
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE
50 Pulsed
40
40
30 VGS = 4.5 V 20 10 V
30
20
ID = 9 A
10
10
0 0.1 1 10 100
0 0 5 10 15 20
ID - Drain Current - A
VGS - Gate to Source Voltage - V
4
Data Sheet D15968EJ3V0DS
2SK3640
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE
40
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
30
VGS = 4.5 V 10 V
Ciss, Coss, Crss - Capacitance - pF
VGS = 0 V f = 1 MHz
1000 Ciss
20
100
Coss Crss
10 ID = 9 A Pulsed 0 -50 0 50 100 150
10 0.01
0.1
1
10
100
Tch - Channel Temperature - C
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
30 12 VDD = 24 V 15 V 6V 10 8 6 VGS 4 2 VDS 0 0 5 10 ID = 19 A 0 15
VDS - Drain to Source Voltage - V
25 20 15 10 5
tf 10 td(on)
td(off)
tr
1 0.1 1 10 100
ID - Drain Current - A
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
1000
REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT
di/dt = 100 A/s VGS = 0 V
100
VGS = 10 V
trr - Reverse Recovery Time - ns
IF - Diode Forward Current - A
100
10 0V 1
10
0.1 Pulsed 0.01 0 0.5 1 1.5
1 0.1 1 10 100
VF(S-D) - Source to Drain Voltage - V
IF - Diode Forward Current - A
Data Sheet D15968EJ3V0DS
5
VGS - Gate to Source Voltage - V
td(on), tr, td(off), tf - Switching Time - ns
VDD = 15 V VGS = 10 V RG = 10
2SK3640
SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD
100
120
SINGLE AVALANCHE ENERGY DERATING FACTOR
VDD = 15 V RG = 25 VGS = 20 0 V IAS 10 A
IAS - Single Avalanche Current - A
Energy Derating Factor - %
100 80 60 40 20 0
10
IAS = 10 A EAS = 10 mJ
1
VDD = 15 V RG = 25 VGS = 20 0 V Starting Tch = 25C 0.1 1 10
0.1 0.01
25
50
75
100
125
150
L - Inductive Load - mH
Starting Tch - Starting Channel Temperature - C
6
Data Sheet D15968EJ3V0DS
2SK3640
PACKAGE DRAWING (Unit: mm)
TO-252 (MP-3ZK)
1.0 TYP.
6.50.2 5.1 TYP. 4.3 MIN. 4
2.30.1 0.50.1 No Plating
6.10.2 10.4 MAX. (9.8 TYP.)
4.0 MIN.
1
0.8
2
3
No Plating 0 to 0.25 0.50.1 1.0
1.14 MAX. 2.3 2.3
0.760.12
1. Gate 2. Drain 3. Source 4. Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body Diode
Gate Protection Diode
Source
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
0.51 MIN.
Data Sheet D15968EJ3V0DS
7
2SK3640
* The information in this document is current as of January, 2005. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above).
M8E 02. 11-1

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